n-channel jfet monolithic dual sst440 / sst441 features high gain . . . . . . . . . . . . . . . . . . . . . . . gf s > 6 ms typical low leakage . . . . . . . . . . . . . . . . . . . . . . i g < 1pa typical low noise surface mount package applications differential wideband amplifiers vhf/uhf amplifiers test and measurement description calogics sst440 series is a high speed n-channel monolithic dual jfet in a surface mount so-8 package. this device is well suited for use as wideband differential amplifiers in test and measurement applications. the combination of high gain, low leakage and low noise make it an excellent performer. ordering information part package temperature range sst440-1 plastic so-8 -55 o c to +150 o c note: for sorted chips in carriers, see u440 series pin configuration llc so-8 top view (1) s1 (2) d1 (3) g1 (4) n/c n/c (8) g2 (7) d2 (6) s2 (5) cj1 product marking sst440 sst440 sst441 sst441
sst440 / sst441 llc absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter/test condition symbol limit unit gate-drain voltage v gd -25 v gate-source voltage v gs -25 v forward gate current i g 50 ma power dissipation (per side) p d 300 mw (total) 500 mw power derating (per side) 2.4 mw/ o c (total) 4 mw/ o c operating junction temperature t j -55 to 150 o c storage temperature t stg -55 to 150 o c lead temperature (1/16" from case for 10 seconds) t l 300 o c electrical characteristics (t a = 25 o c unless otherwise noted) symbol characteristcs typ 1 sst440 sst441 unit test conditions min max min max static v (br)gss gate-source breakdown voltage -35 -25 -25 v i g = -1 m a, v ds = 0v v gs(off ) gate-source cut off voltage -3.5 -1 -6 -1 -6 v ds = 10v, i d = 1na i dss saturation drain current 2 15630630 mav ds = 10v, v gs = 0v i gss gate reverse current -1 -500 -500 pa v gs = -15v, v ds = 0v -0.2 na t a = 125 o c i g gate operating current -1 -500 -500 pa v dg = 10v, i d = 5ma -0.2 na t a = 125 o c v gs(f) gate-source forward voltage 0.7 v i g = 1ma, v ds = 0v dynamic g fs common-source forward transconductance 6 4.5 9 4.5 9 ms v dg = 10v, i d = 5ma f = 1khz g os common-source output conductance 20 200 200 m s g fs common-source forward transconductance 5.5 ms v dg = 10v, i d = 5ma f = 100mhz g os common-source output conductance 30 m s c iss common-source input capacitance 3.5 pf v dg = 10v, i d = 5ma f = 1mhz c rss common-source reverse transfer capacitance 1 e n equivalent input noise voltage 4 nv/ hz v dg = 10v, i d = 5ma f = 10khz matching | v gs1 -v gs2 | differential gate-source voltage 7 10 20 mv v dg = 10v, i d = 5ma d | v gs1 -v gs2 | d t gate-source voltage differential change with temperature 10 m v/ o c t = -55 to 25 o c v dg =10v, i d = 5ma 10 t = 25 to 125 o c i dss1 i dss2 saturation drain current ratio 0.98 v ds = 10v, v gs = 0v g fs1 g fs2 transconductance ratio 0.98 v dg = 10v, i d = 5ma f= 1 khz cmrr common mode rejection ratio 90 db v dd = 5 to 10v, i d = 5ma notes: 1. for design aid only, not subject to production testing. 2. pulse test; pw = 300 m s, duty cycle 3%.
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